Title | Micro-electro-discharge machining by MEMS actuators with planar electrodes microfabricated on the work surfaces |
Publication Type | Conference Paper |
Year of Publication | 2008 |
Authors | Alla Chaitanya, C. R., and K. Takahata |
Conference Name | Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on |
Pagination | 375 -378 |
Date Published | jan. |
Keywords | copper, copper electrodes, Cu, depth 20 mum, electrostatic actuation, electrostatic actuators, FeCCrJk, MEMS actuators, microelectro-discharge machining, microelectrodes, microfabrication, micromachining, planar electrodes, resistance-capacitance circuit, self-regulated discharging-charging cycle, size 18 mum, spark discharges, spark machining, stainless steel, stainless-steel wafer, voltage 80 V to 140 V |
Abstract | This paper reports a MEMS-based micro-electro-discharge machining technique that is enabled by the actuation of micromachined planar electrodes defined on the surfaces of the workpiece. The 18-mum-thick copper electrodes suspended with the anchors are formed on a stainless-steel wafer/workpiece. A DC voltage of 80-140 V is applied between the electrode and the workpiece through a resistance-capacitance circuit that controls the pulse energy and timing of spark discharges. The suspended electrode is electrostatically actuated towards the wafer, resulting in a breakdown, or spark discharge. This instantly lowers the gap voltage, releasing the electrode, and the capacitor is charged up through the resistor. Sequential pulses are produced through the self-regulated discharging-charging cycle. Micromachining of the stainless-steel wafer is demonstrated using an electrode with the area of 1.6times1.03 mm2, achieving removal depth of 20 mum with 100 V that provides the electrode's displacement of 30 mum. The pulse formation is also implemented using only the parasitic/built-in capacitance between the electrode and the workpiece. A dynamic characteristic of the built-in capacitance is experimentally analyzed. |
URL | http://dx.doi.org/10.1109/MEMSYS.2008.4443671 |
DOI | 10.1109/MEMSYS.2008.4443671 |