Title | Comparison of strain relaxation in InGaAsN and InGaAs thin films |
Publication Type | Journal Article |
Year of Publication | 2002 |
Authors | Adamcyk, M., J. H. Schmid, T. Tiedje, A. Koveshnikov, A. Chahboun, V. Fink, and K. L. Kavanagh |
Journal | Applied Physics Letters |
Volume | 80 |
Pagination | 4357–4359 |
ISSN | 0003-6951 |
Abstract | We compare the strain relaxation of In0.08Ga0.92As and In0.12Ga0.88As0.99N0.01 epitaxial thin films grown on GaAs (001) by elemental-source molecular-beam epitaxy. The epilayers we studied were essentially identical in their compressive lattice mismatch (0.62+/-0.02%), and thickness (600 nm). The strain state of the samples was determined by in situ substrate curvature monitoring, and by ex situ x-ray diffraction and plan-view transmission electron microscopy. We observe a slower rate of strain relaxation, and a 25% higher residual strain in the nitride. This is attributed to the presence of nitrogen interstitials in the InGaAsN epilayers and/or to the higher nitrogen bond strengths. (C) 2002 American Institute of Physics. |
URL | http://dx.doi.org/10.1063/1.1485124 |
DOI | 10.1063/1.1485124 |