Comparison of strain relaxation in InGaAsN and InGaAs thin films

TitleComparison of strain relaxation in InGaAsN and InGaAs thin films
Publication TypeJournal Article
Year of Publication2002
AuthorsAdamcyk, M., J. H. Schmid, T. Tiedje, A. Koveshnikov, A. Chahboun, V. Fink, and K. L. Kavanagh
JournalApplied Physics Letters
Volume80
Pagination4357–4359
ISSN0003-6951
Abstract

We compare the strain relaxation of In0.08Ga0.92As and In0.12Ga0.88As0.99N0.01 epitaxial thin films grown on GaAs (001) by elemental-source molecular-beam epitaxy. The epilayers we studied were essentially identical in their compressive lattice mismatch (0.62+/-0.02%), and thickness (600 nm). The strain state of the samples was determined by in situ substrate curvature monitoring, and by ex situ x-ray diffraction and plan-view transmission electron microscopy. We observe a slower rate of strain relaxation, and a 25% higher residual strain in the nitride. This is attributed to the presence of nitrogen interstitials in the InGaAsN epilayers and/or to the higher nitrogen bond strengths. (C) 2002 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.1485124
DOI10.1063/1.1485124

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