David L. Pulfrey received the BSc and PhD in electrical engineering from the University of Manchester, England in 1965 and 1968, respectively. Since 1969 he has been on the faculty in the Electrical Engineering Department at UBC.
Dr. Pulfrey teaches and researches in the area of semiconductor devices. He has received awards for his teaching at the university-, provincial- and international-levels: inaugural winner of UBC's Teaching Prize for Engineering in 1990; the 2009 Teaching Award for Excellence in Engineering and Geoscience Education from the Association of Professional Engineers and Geoscientists of British Columbia; the 2009 Education Award from the IEEE Electron Devices Society. He has received recognition for his research work by being made Fellow of IEEE (2000) and the Canadian Academy of Engineering (2002).
ELEC 415 |
Semiconductor Devices: Physics, Design and Analysis Physics of operation, and design and analysis of semiconductor devices of topical interest, e.g., solar cells, LEDs, high-speed MOSFETs, high-frequency HBTs, low-noise HEMTs. |
Solid State Electronic and Photonic Devices Solid-state devices of current interest (e.g., heterostructure transistors and lasers, very high speed silicon bipolars, short-channel MOSFETs) and their application in high-speed circuits. Course Outline This year’s course is based on three issues of great topical interest to the electronics community: |
2008 |
Effect of Single-Biomolecule Adsorption on the Electrical Properties of Short Carbon Nanotubes Conference Paper | Nanotechnology, 2008. Nano '08. 8th IEEE Conference on |
2008 |
Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications? Conference Paper | Device Research Conference, 2008 |
2008 |
Common-emitter and common-base small-signal operation of the transistor laser Journal Article | Applied Physics Letters |
2008 |
Examination of the high-frequency capability of carbon nanotube FETs Journal Article | Solid -State Electronics |
2008 |
Small-signal modeling of the transistor laser in common-emitter and common-base configurations Conference Paper | IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the |
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