@conference {Castro2002Towards-a-compa,
title = {Towards a compact model for Schottky-barrier nanotube FETs},
booktitle = {Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on},
year = {2002},
month = {dec.},
pages = {303 - 306},
abstract = {Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson{\textquoteright}s equation at equilibrium and Laplace{\textquoteright}s equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 mu;m are predicted.},
keywords = {1 muA, 2D solutions, ballistic transport, carbon nanotubes, carbon-nanotube field-effect transistors, coaxial-geometry, compact model, drain current-voltage characteristics, Laplace equation, Laplace equations, nanotube devices, nonequilibrium barrier shapes, nonequilibrium flux approach, Poisson equation, Schottky barriers, Schottky gate field effect transistors, Schottky-barrier, Schottky-barrier nanotube FETs, source-tube, tunneling, tunnelling},
issn = {1097-2137},
doi = {10.1109/COMMAD.2002.1237251},
url = {http://dx.doi.org/10.1109/COMMAD.2002.1237251},
author = {Castro, L. C. and John, D. L. and Pulfrey, D L}
}