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"THE INFLUENCE OF SPATIALLY NON-UNIFORM DENSITY-OF-STATE DISTRIBUTIONS ON THE CHARACTERISTICS OF A-SI-H THIN-FILM TRANSISTORS",
Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties, vol. 61, no. 2, ONE GUNDPOWDER SQUARE, LONDON, ENGLAND EC4A 3DE, TAYLOR & FRANCIS LTD, pp. 263-276, FEB, 1990.
"AMORPHOUS-SILICON THIN-FILM TRANSISTORS MODIFIED BY DOPING AND PLASMA TREATMENT OF THE NITRIDE",
AMORPHOUS SILICON TECHNOLOGY - 1991, vol. 219: MAT RES SOC, pp. 309-314, 1991.
"AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NONUNIFORM DISTRIBUTION OF GAP STATES",
AMORPHOUS SILICON TECHNOLOGY - 1991, vol. 219: MAT RES SOC, pp. 339-344, 1991.
"INTERNAL CURRENTS IN MULTI LAYER STRUCTURES",
Superlattices and Microstructures, vol. 10, no. 1, 24-28 OVAL RD, LONDON, ENGLAND NW1 7DX, ACADEMIC PRESS LTD, pp. 59-62, 1991.
"PARALLEL EVENT-DRIVEN WAVE-FORM RELAXATION",
IEEE INTERNATIONAL CONFERENCE ON COMPUTER-DESIGN : VLSI IN COMPUTERS AND PROCESSORS: IEEE, COMP SOC; IEEE, CIRCUITS & SYST SOC, pp. 101-104, 1991.
"INFLUENCE OF NONRADIATIVE AND NONGEMINATE PROCESSES ON A LIFETIME DISTRIBUTION OF PHOTOEXCITED CARRIERS IN AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES",
Journal of Non-Crystanlline Solids, vol. 137, no. Part 1, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, ELSEVIER SCIENCE BV, pp. 567-570, DEC, 1991.
Abstract
"EXACT EVALUATION OF DIAGNOSTIC-TEST RESOLUTION",
29TH ACM/IEEE DESIGN AUTOMATION CONFERENCE : PROCEEDINGS: IEEE, COMP SOC, TECH COMM DESIGN AUTOMAT; IEEE, CIRCUITS & SYST SOC; ASSOC COMP MACHINERY, SPECIAL INTEREST GRP DESIGN AUTOMAT, pp. 347-352, 1992.
"ANION-TREATED SOLID ACIDS FOR BUTENE DIMERIZATION",
Abstracts of Paper s of the American Chemical Society, vol. 203, no. Part 2, 1155 16TH ST, NW, WASHINGTON, DC 20036, AMER CHEMICAL SOC, pp. 74-PETR, APR 5, 1992.
"OPTICAL DEPHASING IN SEMICONDUCTOR MIXED-CRYSTALS",
Physical Review B, vol. 46, no. 8, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA, AMERICAN PHYSICAL SOC, pp. 4564-4581, AUG 15, 1992.
Abstract
"OPTICAL-PHONON-ASSISTED AND ACOUSTICAL-PHONON-ASSISTED HOPPING OF LOCALIZED EXCITONS IN CDTE/ZNTE QUANTUM-WELLS",
Physical Review B, vol. 45, no. 8, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA, AMERICAN PHYSICAL SOC, pp. 4253-4257, FEB 15, 1992.
Abstract
"FREQUENCY-DOMAIN ANALYSIS OF SWITCHED-CAPACITOR CIRCUITS CONTAINING NONIDEALITIES",
PROCEEDINGS OF THE IEEE 1993 CUSTOM INTEGRATED CIRCUITS CONFERENCE: IEEE, ELECTRON DEVICES SOC, pp. T5-&, 1993.
"PHOTOLUMINESCENCE AND LIGHT-INDUCED ESR IN A-SI-H STUDIED WITH SUBGAP EXCITATION",
AMORPHOUS SILICON TECHNOLOGY-1993, vol. 297, 9800 MCKNIGHT RD, SUITE 327, PITTSBURGH, PA 15237, MAT RES SOC; ELECT POWER INST; ELETTRORAVA SPA; ENTE NAZL ENERGIA ATOM; XEROX CORP; KERNFORSCHUNGSANLAGE; SOLAREX CORP; ADV PHOTOVOLTAIC SYSTS; USSC, pp. 219-224, 1993.
"INFLUENCE OF DEFECTS AND TEMPERATURE ON THE LIFETIME DISTRIBUTION OF CARRIERS IN A-SI-H",
Journal of Non-Crystanlline Solids, vol. 166, no. Part 1, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, IUPAP; HITACHI LTD; FUJI ELECT CO LTD; INT COMMUN SPECIALISTS; BNR STL; TAYLOR & FRANCIS LTD; INST MAT; INST ELECT ENGINEERS; INT SCI FDN; WELSH DEV AGCY; SANYO ELECT CO LTD; KANEKA CORP; OXFORD INSTRUMENTS LTD; ICI ZENECA; IBM US; INST PHYS; ROYAL SOC; B, pp. 555-558, DEC, 1993.
Abstract
"NONEQUILIBRIUM CARRIERS IN A-SI-H EXCITED BY DEFECT ABSORPTION",
Journal of Non-Crystanlline Solids, vol. 166, no. Part 1, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, IUPAP; HITACHI LTD; FUJI ELECT CO LTD; INT COMMUN SPECIALISTS; BNR STL; TAYLOR & FRANCIS LTD; INST MAT; INST ELECT ENGINEERS; INT SCI FDN; WELSH DEV AGCY; SANYO ELECT CO LTD; KANEKA CORP; OXFORD INSTRUMENTS LTD; ICI ZENECA; IBM US; INST PHYS; ROYAL SOC; B, pp. 563-566, DEC, 1993.
Abstract
"NEW MACRO MODEL FOR ZENERS",
IEEE Circuits and Devices Magazine, vol. 9, no. 2, 345 E 47TH ST, NEW YORK, NY 10017-2394, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, pp. 7-11, MAR, 1993.
"DYNAMICS OF LOCALIZED EXCITONS AND HIGH-EXCITATION EFFECTS IN II-VI QUANTUM-WELLS AND HETEROSTRUCTURES",
Physica B, vol. 191, no. 1-2, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, ELSEVIER SCIENCE BV, pp. 90-101, SEP, 1993.
Abstract
"BENCHMARK CIRCUITS FOR MIXED-MODE SIMULATORS",
PROCEEDINGS OF THE IEEE 1994 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 345 E 47TH ST, NEW YORK, NY 10017, IEEE ELECTRON DEVICES SOC; IEEE SOLID STATE CIRCUITS COUNCIL, pp. 441-448, 1994.
"BUTENE DIMERIZATION OVER SULFATE AND TUNGSTATE MODIFIED SOLID ACIDS",
ACID-BASE CATALYSIS II, vol. 90, SARA BURGERHARTSTRAAT 25, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, Hokkaido Univ, Grad Sch Environm Earth Sci; Sapporo Int Commun Plaza Fdn, pp. 537-541, 1994.
Abstract
"NON-RADIATIVE RECOMBINATION IN A-SIH",
AMORPHOUS SILICON TECHNOLOGY-1994, vol. 336, 9800 MCKNIGHT RD, SUITE 327, PITTSBURGH, PA 15237, MAT RES SOC, pp. 189-194, 1994.
"SIMULATOR CHARACTERISTICS NEEDED TO INTERFACE TO ANALOG HDLS",
INTERNATIONAL CONFERENCE ON SIMULATION AND HARDWARE DESCRIPTION LANGUAGES (ICSHDL) - PROCEEDINGS OF THE 1994 WESTERN MULTICONFERENCE, PO BOX 17900, SAN DIEGO, CA 92177, SOC COMP SIMULAT, pp. 31-36, 1994.
"Evaluating mixed-signal simulators",
PROCEEDINGS OF THE IEEE 1995 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 345 E 47TH ST, NEW YORK, NY 10017, IEEE, Electron Devices Soc; IEEE, Solid State Circuits Council, pp. 113-120, 1995.
"Improving parallel circuit simulation using high-level waveforms",
1995 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3, 345 E 47TH ST, NEW YORK, NY 10017, IEEE Circuits & Syst Soc, pp. 728-731, 1995.
"RECOMBINATION AT DEFECTS IN AMORPHOUS-SILICON (A-SI-H)",
Journal of Non-Crystanlline Solids, vol. 190, no. 1-2, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, ELSEVIER SCIENCE BV, pp. 9-20, OCT, 1995.
Abstract
"Time warping-waveform relaxation in a distributed circuit simulation environment",
38TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, PROCEEDINGS, VOLS 1 AND 2, 345 E 47TH ST, NEW YORK, NY 10017, Fed Univ Rio de Janeiro; IEEE, Circuits & Syst Soc, pp. 338-341, 1996.
"Electron and hole-spin densities in undoped illuminated a-Si:H",
Journal of Non-Crystanlline Solids, vol. 200, no. Part 1, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, IUPAP; Japan Soc Appl Phys; Commemorat Assoc Japan World Exposit 1970; Kobe City; New Energy & Ind Technol Dev Org; AIST MITI, New Sunshine Project Org; Kansai Res Fdn Technol Promot; Murata Sci Fdn; Commun Ind Assoc Japan; Japan Automobile Manufacturers , pp. 367-370, MAY, 1996.
Abstract
