David John

Department of Electrical and Computer Engineering
Institute of Applied Mathematics
The University of British Columbia
Vancouver, BC
davej(at)ece.ubc.ca

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Publications

[1] D.L. John and D.L. Pulfrey, "Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry," J. Comp. Electron. Accepted subject to revision May 27, 2006.

[2] L.C. Castro, D.L. Pulfrey, and D.L. John, "High-frequency capability of Schottky-barrier carbon nanotube FETs," Solid-State Phenomena. Accepted December 22, 2005.

[3] D.L. John and D.L. Pulfrey, "Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors," J. Vac. Sci. Technol. A, vol. 24, no. 3, pp. 708-712, 2006.

[4] D.L. John and D.L. Pulfrey, "Green's function calculations for semi-infinite carbon nanotubes," Physica Status Solidi (b), vol. 243, no. 2, pp. 442-448, 2006.

[5] L.C. Castro, D.L. John, and D.L. Pulfrey, "An improved evaluation of the DC performance of carbon nanotube field-effect transistors," Smart Mater. Struct, vol. 15, no. 1, pp. S9-S13, 2006.

[6] D.L. Pulfrey, D.L. John, and L.C. Castro, "Carbon nanotube field-effect transistors: AC performance capabilities," in Proc. 13th Intl. Workshop Phys. Semiconductor Dev. (Delhi, India), pp. 7-13, 2005. Invited.

[7] L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, and H. Kosina, "Method for predicting f_T for carbon nanotube FETs," IEEE Trans. Nanotechnol, vol. 4, no. 6, pp. 699-704, 2005.

[8] D.L. John, L.C. Castro, and D.L. Pulfrey, "Quantum capacitance in nanoscale device modeling," J. Appl. Phys., vol. 96, no. 9, pp. 5180-5184, 2004.

[9] J.P. Clifford, D.L. John, L.C. Castro, and D.L. Pulfrey, "Electrostatics of partially gated carbon nanotube FETs," IEEE Trans. Nanotechnol., vol. 3, no. 2, pp. 281-286, 2004.

[10] L.C. Castro, D.L. John, and D.L. Pulfrey, "Carbon nanotube transistors: an evaluation," in Proc. SPIE Conf. Device and Process Technologies for MEMS, Microelectronics, and Photonics III (Perth, Australia), vol. 5276, pp. 1-10, April 2004.

[11] D.L. John, L.C. Castro, P.J.S. Pereira, and D.L. Pulfrey, "A Schrödinger-Poisson solver for modeling carbon nanotube FETs," in Tech. Proc. of the 2004 NSTI Nanotechnology Conf. and Trade Show (Boston, U.S.A.), vol. 3, pp. 65-68, March 2004.

[12] J. Clifford, D.L. John, and D.L. Pulfrey, "Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs," IEEE Trans. Nanotechnol., vol. 2, no. 3, pp. 181-185, 2003.

[13] D.L. John, L.C. Castro, J. Clifford, and D.L. Pulfrey, "Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors," IEEE Trans. Nanotechnol., vol. 2, no. 3, pp. 175-180, 2003.

[14] L.C. Castro, D.L. John, and D.L. Pulfrey, "Towards a compact model for Schottky-barrier nanotube FETs," in Proc. IEEE Conf. on Optoelectronic and Microelectronic Materials and Devices (Sydney, Australia), pp. 303-306, December 2002.